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| Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) N-Channel 20 FEATURES rDS(on) (W) ID (A) 0.70 0.54 -0.60 -0.50 -0.42 D TrenchFETr Power MOSFET Pb-free Available 0.385 @ VGS = 4.5 V 0.630 @ VGS = 2.5 V 0.600 @ VGS = -4.5 V 0.850 @ VGS = -2.5 V 1.200 @ VGS = -1.8 V P-Channel -8 SOT-363 SC-70 (6-LEADS) S1 G1 D2 1 6 5 D1 G2 S2 Marking Code YY Lot Traceability and Date Code Part # Code RB XX 2 3 4 Ordering Information: Si1555DL-T1 Si1555DL-T1--E3 (Lead (Pb)-Free) Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State -8 "8 Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 "12 Unit V "0.70 "0.50 "0.66 "0.48 "1.0 -0.60 -0.43 -0.57 -0.41 A 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150 -0.25 0.30 0.16 -0.23 0.27 0.14 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71079 S-50245--Rev. D, 21-Feb-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit _C/W C/W 1 Si1555DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -8 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = -8 V, VGS = 0 V, TJ = 85_C On-State On State Drain Currenta ID( ) D(on) VDS w 5 V, VGS = 4.5 V VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 0.66 A VGS = -4.5 V, ID = -0.57 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.40 A VGS = -2.5 V, ID = -0.48 A VGS = -1.8 V, ID = -0.20 A Forward Transconductancea gf fs VSD VDS = 10 V, ID = 0.66 A VDS = -4 V, ID = -0.57 A IS = 0.23 A, VGS = 0 V IS = -0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 0.320 0.510 0.560 0.720 1.00 1.5 1.2 0.8 -0.8 1.2 -1.2 0.385 0.600 0.630 0.850 1.200 S W 0.6 -0.45 1.4 -1.0 "100 "100 1 -1 5 -5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A P-Channel VDS = -4 V VGS = -4.5 V ID = -0.57 A 4 V, 4 5 V, 0 57 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W P-Channel VDD = -4 V RL = 8 W 4 V, ID ^ -0.5 A, VGEN = -4.5 V, Rg = 6 W 0.5 4.5 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 0.23 A, di/dt = 100 A/ms IF = -0.23 A, di/dt = 100 A/ms N-Ch P-Ch 0.8 1.5 0.06 0.17 0.30 0.16 10 6 16 25 10 10 10 10 20 20 20 12 30 50 20 20 20 20 40 40 ns 1.2 2.3 nC Gate-Source Gate Source Charge Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71079 S-50245--Rev. D, 21-Feb-05 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2V 0.6 0.8 1.0 N-CHANNEL Transfer Characteristics 0.6 0.4 0.4 TC = 125_C 0.2 25_C -55_C 0.2 1.5 V 1V 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 r DS(on) - On-Resistance ( W ) 100 Capacitance C - Capacitance (pF) 0.8 80 Ciss 0.6 VGS = 2.5 V 60 0.4 VGS = 4.5 V 40 Coss 20 Crss 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.66 A 4 rDS(on) - On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.66 A 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71079 S-50245--Rev. D, 21-Feb-05 www.vishay.com 3 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 1.0 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 ID = 0.66 A I S - Source Current (A) TJ = 150_C 0.6 0.4 TJ = 25_C 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 -0.1 -0.2 -0.3 -0.4 -50 1 Power (W) 3 5 Single Pulse Power 4 2 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71079 S-50245--Rev. D, 21-Feb-05 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 N-CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) P-CHANNEL 1.0 Output Characteristics 2V Transfer Characteristics TC = -55_C 0.8 25_C 125_C 0.6 1.5 V 0.4 0.6 0.4 0.2 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 r DS(on) - On-Resistance ( W ) 160 Capacitance 1.5 C - Capacitance (pF) VGS = 1.8 V 120 Ciss 1.0 VGS = 2.5 V VGS = 4.5 V 80 Coss 40 Crss 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Document Number: 71079 S-50245--Rev. D, 21-Feb-05 www.vishay.com 5 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 0.57 A 4 rDS(on) - On-Resiistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 0.57 A P-CHANNEL On-Resistance vs. Junction Temperature 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 2.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 1.5 ID = 0.57 A 1.0 TJ = 150_C TJ = 25_C 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 -0.1 -0.2 -50 1 Power (W) 3 5 Single Pulse Power 4 2 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) www.vishay.com 6 Document Number: 71079 S-50245--Rev. D, 21-Feb-05 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 P-CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71079. Document Number: 71079 S-50245--Rev. D, 21-Feb-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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